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IRF150SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 Gate Pad 2 Drain Pad 3 Source Note IRFNxxx also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) VGS Gate Source Voltage 20V ID Continuous Drain Current (VGS = 0 , Tcase = 25 C) 27A ID Continuous Drain Current (VGS = 0 , Tcase = 100 C) 19A IDM Pulsed Drain Current 1 108A PD Power Di
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irf150smd.pdf Проектирование, MOSFET, Мощность
irf150smd.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
irf150smd.pdf База данных, Инновации, ИМС, Транзисторы
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