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MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Tamb=25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 5 V, IC = 1 mA hFE 80 - - at VCE = 5 V, IC = 10 mA hFE 80 250 - at VCE = 5 V, IC = 50 mA hFE 30 - - Collector Base Cutoff Current ICBO - 50 nA at VCB = 120 V Emitter Base Cutoff Current IEBO - 50 nA at VEB = 4 V Collector Base Breakdown Voltage V(BR)CBO 180 - V at IC = 100 A Collector Emitter Breakdown Voltage V(BR)CEO 160 -