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BCR 08PNNPN/PNP Silicon Digital Tansistor Array Switching circuit, inverter, interface circuit, drive circuit Two (galvanic) internal isolated NPN/PNP Transistor in one package Built in bias resistor (R1=2.2k, R2=47k)Tape loading orientationType Marking Ordering Code Pin Configuration PackageBCR 08PN WFs Q62702-C2486 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEBO 5Input on Voltage Vi(on) 10DC collector current IC 100 mATotal power dissipation, TS = 115C Ptot 250 mWJunction temperature Tj 150 CStorage temperature Tstg - 65 ... + 150Thermal Resistance1)Junction ambient RthJA 275 K/WJunction - soldering point RthJS 1401) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 CuSemiconductor G

 

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 bcr08pn.pdf Проектирование, MOSFET, Мощность

 bcr08pn.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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