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2STR1160 Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits Description SOT-23 The device in a NPN transistor manufactured using new PB-HCD (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Figure 1. Internal schematic diagram The complementary PNP is the 2STR2160. Applications LED Battery charger Motor and relay driver Voltage regulation Table 1. Device summary Order code Marking Package Packing 2STR1160 160 SOT-23 Tape and reel February 2008 Rev 1 1/11 www.st.com 11 Content 2STR1160 Content 1 Electrical ratings . . . . . . . . . . . . . . .

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 2str1160.pdf Проектирование, MOSFET, Мощность

 2str1160.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2str1160.pdf База данных, Инновации, ИМС, Транзисторы