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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 3 STB10N65K3 150 W 2 D2PAK 1 STF10N65K3 TO-220FP 650 V 1 10 A 35 W STFI10N65K3 TAB STP10N65K3 150 W 100% avalanche tested 3 Extremely low on-resistance RDS(on) 2 1 Gate charge minimized I2PAKFP (TO-281) TO-220 Very low intrinsic capacitances Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics D(2, TAB) Zener-protected Applications Switching applications G(1) Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, S(3) combined with a new optimized vertical struc