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2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3566 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 5.6 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k ) VDGR 900 V Gate-source voltage VGSS 30 V 1 Gate DC (Note 1) ID 2.5 2 Drain Drain current A 3 Source Pulse (t = 1 ms) IDP 7.5 (Note 1) Drain power dissipation (Tc = 25 C) JEDEC PD 40 W Single pulse avalanche energy JEITA SC-67 EAS 216 mJ (Note 2) TOSHIBA 2-10U1B Avalanche current IAR 2.5 A Weight 1.7 g (typ.) Repetitive a