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2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications Unit mm Suitable for use as first stage for equalizer and MC head amplifiers. High Y Y = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA) fs fs DS GS DSS High breakdown voltage V = -40 V (min) GDS Super low noise NF = 1.0dB (typ.) (V = 10 V, I = 5 mA, f = 1 kHz, R = 100 ) DS D G High input impedance I = -1 nA (max) (V = -30 V) GSS GS Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -40 V Gate current IG 10 mA Drain power dissipation PD 400 mW Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight 0.21 g (typ.) Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test