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UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65 W Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V IC Collector Current 5 A ELECTRICAL CHARACTERISTICS(Ta=25 C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage BVCEO IC=100mA 100 V Collector Cut-Off Current ICBO VCB=100V 200 uA Collector-Cut-Off Current ICEO VCE=50V 500 uA Emitter Cut-Off Current IEBO VEB=5V 2 mA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=3A, IB=12mA 2 V Coll