Скачать даташит для 2sb817d_2sb817e:

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB817 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047 APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -12 A C I Collector Current-Pulse -15 A CP Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -40 150 stg 1 SPTECH website www.superic-tech.com SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB817 ELECTRICAL CHARACTERISTICS