Скачать даташит для 2sb817e:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817E DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -12 A C I Collector Current-Pulse -15 A CP Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg isc website www.iscsemi.com isc & iscsemi is registered trademark