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isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1.5 A C I Base Current-Continuous 0.5 A B Collector Power Dissipation 1.5 @ T =25 a P W C Collector Power Dissipation 25 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2