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isc Silicon NPN Power Transistor 2SC2075 DESCRIPTION High transition frequency Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 27MHz Power Amplifier Applications Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V 80 V CER Collector-Emitter Voltage R =150 BE V Emitter-Base Voltage 4 V EBO I Collector Current-Continuous 4 A C I Emitter current 4 A E Collector Power Dissipation Pc 10 W @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2075 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL