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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- VCER= 75V(Min) ;RBE=150 Collector Current- IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=150 75 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A Collector Power Dissipation 1.2 @ Ta=25 PC W Collector Power Dissipation 10 @ TC=50 TJ Junction Temperature 150 Storage Temperature Range -55 150 Tstg isc Website www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specif