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Ordering number EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit mm 2010C [2SC2078] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCER RBE=150 75 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Collector Dissipation PC 1.2 W Tc=50 C 10 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=40V, IE=0 10 A Emitter Cutoff Current IEBO VEB=4V, IC=0 10 A DC Current Gain hFE VCE=5V, IC=0.5A 25* 200* Gain-Bandwidth Pr