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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV Collector-Emitter Voltage 400 VCEO(SUS)V Emitter-Base voltage 7 VEBOI Collector Current-Continuous 10 ACI Base Current-Continuous 3 ABCollector Power DissipationP 80 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.17 /Wth j-c1SPTECH websitewww.