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AP15P15GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220CFM isolation package is widely preferred for commercial-GDindustrial through hole applications.TO-220CFM(I)SAbsolute Maximum RatingsSymbol Parameter Rating UnitsVDS Drain-Source Voltage -140 VVGS Gate-Source Voltage +20 VContinuous Drain Current, VGS @ 10VID@TC=25 -15 AContinuous Drain Current, VGS @ 10VID@TC=100 -9.7 AIDM Pulsed Drain Current1 -60 APD@TC=25 Total Power Dissipation 31.3 W TSTG Storage Temperature Rang

 

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 ap15p15gi.pdf Проектирование, MOSFET, Мощность

 ap15p15gi.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ap15p15gi.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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