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AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

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 ap3400mi.pdf Проектирование, MOSFET, Мощность

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