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AP4N06SI 60V N-Channel Enhancement Mode MOSFET Description The AP4N06SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =4.8A DS DR

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 ap4n06si.pdf Проектирование, MOSFET, Мощность

 ap4n06si.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ap4n06si.pdf База данных, Инновации, ИМС, Транзисторы