Скачать даташит для ap50n03df:

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R

Ключевые слова - ALL TRANSISTORS DATASHEET

 ap50n03df.pdf Проектирование, MOSFET, Мощность

 ap50n03df.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ap50n03df.pdf База данных, Инновации, ИМС, Транзисторы