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AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS DR

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 ap50n06y.pdf Проектирование, MOSFET, Мощность

 ap50n06y.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ap50n06y.pdf База данных, Инновации, ИМС, Транзисторы