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AP80P01NF -12V P-Channel Enhancement Mode MOSFET Description The AP80P01NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-80A DS DR

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 ap80p01nf.pdf Проектирование, MOSFET, Мощность

 ap80p01nf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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