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PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated G max 9.2m l Repetitive Avalanche Allowed S ID 87A up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques S D to achieve low on-resistance per silicon area. This G benefit combined with the fast switching speed and TO-220AB ruggedized device design that HEXFET power AUIRF3504 MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use G D S in Automotive and a wide variety of other applications. Gate Drain Source