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PD - 96375AUTOMOTIVE GRADEAUIRFP064NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.008 Fast SwitchingG Fully Avalanche RatedID110A Repetitive Avalanche Allowed up to TjmaxS Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for Automotive applications, thisSCellular design of HEXFET Power MOSFETs utilizesDGthe latest processing techniques to achieve low on-resistance per silicon area. This benefit combined withTO-247ACthe fast switching speed and ruggedized device designthat HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient andGDSreliable device for use in Automotive and a wide variety Gate Drain Sour ceof other applications.Absolute