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BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 100 mAdc80-100 VOLTS, 65 WATTSVCEO(sus) = 80 Vdc (Min) - BDX53B, 54BVCEO(sus) = 100 Vdc (Min) - BDX53C, 54C4 Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 AdcVCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors These Devices are Pb-Free and are RoHS Compliant*MAXIMUM RATINGS1