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April 1995 BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, highVoltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-state resistance while provide Rugged and reliable. rugged, reliable, and fast switching performance. They canHigh saturation current capability.be used in most applications requiring up to 500mA DC.These products are particularly suited for low voltage, lowcurrent applications such as small servo motor control,power MOSFET gate drivers, and other switchingapplications. _______________________________________________________________________________DGSAbsolute Maximum Ratings TA = 2