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DISCRETE SEMICONDUCTORSDATA SHEETBS170N-channel vertical D-MOStransistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel vertical D-MOS transistor BS170DESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 60 Vvertical D-MOS transistor in TO-92Gate-source voltage VGS max. 15 Vvariant envelope and intended for useDrain current (DC) ID max. 500 mAin relay, high-speed andTotal power dissipation up to Tamb =25 C Ptot max. 830 mWline-transformer drivers.Junction temperature Tj max. 150 CDrain-source ON-resistanceFEATURESVGS = 10 V; ID = 200 mA RDS(on) max. 5 Very low RDS(on). Direct interface to C-MOS, TTL,etc. High-speed switching. No secondary breakdown.PINNING - TO-92 VARIANT1 = source2 = gate3