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March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-state resistance while provide Rugged and reliable.rugged, reliable, and fast switching performance. They canbe used in most applications requiring up to 500mA DC. High saturation current capability.These products are particularly suited for low voltage, lowcurrent applications such as small servo motor control,power MOSFET gate drivers, and other switchingapplications.BS170 MMBF170DS D TO-92 SOT-23GGSAbsolute Maximum Ratings TA = 25C unless otherwise noted