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SOT23 N-CHANNEL ENHANCEMENTBS170FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996FEATURES* 60Volt VDSS* RDS(ON) = 5DGPARTMARKING DETAIL MVSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 0.15 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb=25C Ptot 330 mWOperating and Storage Temperature Range Tj:Tstg -55 to +150 CELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Drain-Source BVDSS 60 90 V ID=100A, VGS=0VBreakdown VoltageGate-Source Threshold VGS(th) 0.8 3 V ID=1mA, VDS= VGSVoltageGate-Body Leakage IGSS 10 nA VGS=15V, VDS=0VZero Gate Voltage Drain IDSS 0.5 A VDS=25V, VGS=0VCurrentStatic Drain-Source On-State RDS(on) 5 VGS=10V, ID=20