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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS170/DTMOS FET SwitchingNChannel EnhancementBS1701 DRAIN2GATE3 SOURCEMAXIMUM RATINGS12Rating Symbol Value Unit3DrainSource Voltage VDS 60 VdcCASE 2904, STYLE 30GateSource VoltageTO92 (TO226AA) Continuous VGS 20 Vdc Nonrepetitive (tp 50 s) VGSM 40 VpkDrain Current(1) ID 0.5 AdcTotal Device Dissipation @ TA = 25C PD 350 mWOperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSGate Reverse Current IGSS 0.01 10 nAdc(VGS = 15 Vdc, VDS = 0)DrainSource Breakdown Voltage V(BR)DSS 60 90 Vdc(VGS = 0, ID = 100 Adc)ON CHARACTERISTICS(2)Gate Threshold Voltage VGS(Th) 0.8 2.0 3.