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DHS042N15&DHS042N15E150A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 150VDSSutilizes advanced Split Gate Trench technology, which2 Dprovides excellent Rdson and low Gate charge at the sameR = 5.0mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1 R = 4.8mTO-263DS(on) (TYP)3 S2 FeaturesI = 150AD Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS AEC-Q101 qualified3 Applications Motor control and drive Battery management UPS (Uninterrupible Power Supplies)TO-220TO-2634 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 15

 

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 dhs042n15 dhs042n15e.pdf Проектирование, MOSFET, Мощность

 dhs042n15 dhs042n15e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 dhs042n15 dhs042n15e.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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