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DHS046N10/DHS046N10F/DHS046N10IDHS046N10E/DHS046N10B/DHS046N10D120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy testTO-220C TO-220F TO-262 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuit Power toolsTO-263 TO-252B TO-251B UPS Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)RatingParam