Скачать даташит для dhs052n10_dhs052n10f_dhs052n10i_dhs052n10e_dhs052n10b_dhs052n10d:

DHS052N10/DHS052N10F/DHS052N10IDHS052N10E/DHS052N10B/DHS052N10D110A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.1mDS(on) (TYP)the RoHS standard.13 SI = 110AD2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy testTO-220C TO-220F TO-262 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuit Power toolsTO-263 TO-252B TO-251B UPS Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)RatingPar

Ключевые слова - ALL TRANSISTORS DATASHEET

 dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf Проектирование, MOSFET, Мощность

 dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf База данных, Инновации, ИМС, Транзисторы