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DHS055N07/DHS055N07E105A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =68VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withR = 6.0mTO-220DS(on) (TYP)the RoHS standard. G1R = 5.7mTO-263DS(on) (TYP)3 S2 FeaturesI = 105AD Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuit Power toolsTO-263 UPS TO-220C Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-So