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DHS055N07B/DHS055N07D95A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced splite gate trench technology design, provided V =68V2 D DSSexcellent Rdson and low gate charge. Which accords withR = 6.0mDS(on) (TYP)the RoHS standard.G1I = 95AD3 S2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuit Power toolsTO-252TO-251 UPS Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 68 VDSSGate-to-Source Voltage V