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DSE026N10NA&DSG028N10NA180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedR = 2.4mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 2.2mT0-263DS(on) (TYP)13 SI = 180AD2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS AEC-Q101 qualified3 Applications Synchronous rectification in SMPSTO-220CTO-263 Hard switching and high speed circuit Power tools UPS Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Sy