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DSE043N14N&DSG045N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI =180 AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Motor control and drive Battery management UPS (Uninterrupible Power Supplies)TO-263TO-2204 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 135 VDSSGate-to-Source V