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DSG048N08N3120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.1mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuitTO-220C Power tools UPS Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 85 VDSSGate-to-Source Voltage V 20 VGSST

 

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 dsg048n08n3.pdf Проектирование, MOSFET, Мощность

 dsg048n08n3.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 dsg048n08n3.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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