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DSG053N08N3&DSE051N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 4.8mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 4.4mT0-263DS(on) (TYP)13 SI = 120AD2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuitTO-263TO-220C Battery management UPS (Uninterrupible Power Supplies) Motor control and drive4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwi