Скачать даташит для dsg070n10l3:

DSG070N10L3100V/5.9m/100A N-MOSFETFeatures Key Parameters Low on resistance VDS 100V Low reverse transfer capacitances RDS(on)typ. 5.9m 100% single pulse avalanche energy test ID 100A 100% VDS test Vth 1.7V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 2690pFQgd 12nCApplications Motor Control and Drive Charge/Discharge for Battery Management System Synchronous Rectifier for SMPSTO-220Marking & Packing InformationPart # Package Marking Tube/Reel Qty(pcs)DSG070N10L3 TO-220 DSG070N10L3 Tube 1000/boxRev 1.0 DONGHAI Semiconductor Pg 1/7DSG070N10L3100V/5.9m/100A N-MOSFETAbsolute Maximum RatingsParameter Symbol Value UnitDrain-source voltage VDS 100 VGate-Source voltage VGS 20 VContinuous drain currentTC = 25C 100 ID ATC = 100C 71 Pulsed drain current (TC = 25C, tp l