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April 2000TMQFETQFETQFETQFETFQAF19N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 600V, RDS(on) = 0.38 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.DG TO-3PFGD SSFQAF SeriesAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQAF19N60 UnitsVDSSDrain-Source Voltage 600 VID