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November 2013FQD2N60C / FQU2N60CN-Channel QFET MOSFET600 V, 1.9 A, 4.7 Features Description 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 Aproduced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 8.5 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 4.3 pF)MOSFET technology has been especially tailored to reduce 100% Avalanche Tested on-state resistance, and to provide superior switching RoHS Compliant performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. DDGS I-PAKD-PAKGGDSSAbsolute Maximum Ratings TC = 25C unless otherwise noted.Symbol Parameter FQD2N60CTM / FQU2N60CTU UnitVDSS 6