Скачать даташит для hgtg12n60c3d:

HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Low Conduction Losstransistor. The much lower on-state voltage drop varies only Hyperfast Anti-Parallel Diodemoderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel Packagingwith the IGBT is the development type TA49061.JEDEC STYLE TO-247The IGBT is ideal for many high voltage switching Eapplications operating at moderate