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HGTG18N120BNDData Sheet March 200754A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 54A, 1200V, TC = 25oCThe HGTG18N120BND is a Non-Punch Through (NPT) 1200V Switching SOA CapabilityIGBT design. This is a new member of the MOS gated high Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ = 150oCvoltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device Short Circuit Ratinghas the high input impedance of a MOSFET and the low on- Low Conduction Lossstate conduction loss of a bipolar transistor.The IGBT is ideal for many high voltage switching Packagingapplications operating at moderate frequencies where low JEDEC STYLE TO-247conduction losses are essential, such as: AC and DC motor Econtrols, power supplies and drivers for solenoids, relay