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PD - 91509CIRF3415S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Fully Avalanche RatedID = 43ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the Pak TO-262highest power capability and the lowest possible on- D 2 resistance in any existing surface mo

 

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 irf3415s.pdf Проектирование, MOSFET, Мощность

 irf3415s.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf3415s.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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