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IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of SOA is Power Dissipation Limitedoperation. All of these power MOSFETs are designed for Nanosecond Switching Speedsapplications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Linear Transfer Characteristicspower bipolar switching transistors requiring high speed and High Input Impedancelow gate drive power. They can be operated directly from Related Literatureintegrated circuits.- TB