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PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI 175C Operating Junction Temperature forDD Ruggedness Can Deliver up to 300W per Channel into 4 Load in Half-Bridge Configuration AmplifierGSDGSTO-220ABGDSGate Drain SourceDescriptionThis Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizesthe latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diodereverse recovery and internal Gate resista