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isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF FEATURES Low drain-source on-resistance RDS(on) 45m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provides the designer with an extremely efficient and reliable device for use in battery and load management. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 12 V GS I Drain Current-Continuous 4.2 A D I Drain Current-Single Pulsed 33 A DM P Total Dissipation @T =25 1.25 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-ambient thermal resistance /W Rth(ch-a) 100 1 isc website www.iscsemi.cn isc & iscsemi is regi