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PD - 95501AIRFP064VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 5.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 130Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrialapplications where higher power levels preclude the useTO-247ACof TO-220 devices. The TO-247 is similar but su
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irfp064vpbf.pdf Проектирование, MOSFET, Мощность
irfp064vpbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
irfp064vpbf.pdf База данных, Инновации, ИМС, Транзисторы
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