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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFU220BFEATURESWith TO-251(IPAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsDC-DC convertersHigh frequencyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous@T =25C 4.6I AD2.9T =100CI Drain Current-Single Pulsed 18 ADMP Total Dissipation 40 WDT Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 3.14/WRth(ch-a