Скачать даташит для irg4bc40wl:

PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, IC = 20A Latest-generation IGBT design and construction offers E tighter parameters distribution, exceptional reliabilityn-channel Lead-FreeBenefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higherTO-262D2Pak Low conduction losses and minimal minority-carrierIRG4BC40WLPbFIRG4BC40WSPbF re